IPD090N03LGATMA1
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Краткое описание:
Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Дополнительная информация
Power Field-Effect Transistor, 40A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 2.6ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 9mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 1.6nF |
| Power Dissipation | 42W |
| On-State Resistance | 9mR |
| Max Power Dissipation | 42W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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