IPD100N04S4-02
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Краткое описание:
Power Field-Effect Transistor, 100A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
Дополнительная информация
Power Field-Effect Transistor, 100A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
| RoHS | Compliant |
| Series | OptiMOS™ |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 9.43nF |
| Turn-On Delay Time | 23ns |
| Turn-Off Delay Time | 26ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 150W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
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