IPD122N10N3 G
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Краткое описание:
N-CH Power MOSFET 100V 59A DPAK TO-252 SMT
Дополнительная информация
N-channel enhancement mode power MOSFET in a DPAK (TO-252AA) surface-mount package. Features 100V drain-source voltage, 59A continuous drain current, and low 12.2 mOhm drain-source on-resistance at 10V gate-source voltage. Utilizes OptiMOS process technology for efficient power management. Designed with gull-wing leads and a tab for enhanced thermal performance, suitable for automotive applications.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Process Technology | OptiMOS |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.41(Max) |
| Package Length (mm) | 6.73(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 2.56(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 94000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 26nC |
| Typical Gate Charge @ Vgs | 26@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 12.2@10VmOhm |
| Typical Input Capacitance @ Vds | 1880@50VpF |
| Maximum Continuous Drain Current | 59A |
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