IPD15N06S2L64ATMA2

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IPD15N06S2L64ATMA2 - Infineon
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Краткое описание: N-Channel MOSFET, 55V, 19A, 64mR, TO-252
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 55V Vds, 19A Continuous Drain Current, 64mΩ Rds On. Features 47W power dissipation, 175°C max operating temperature, and TO-252 package. Includes fast switching times with 4ns turn-on and 12ns fall times, and low input capacitance of 354pF. This RoHS and Halogen Free component is supplied on tape and reel.
RoHS Compliant
Series OptiMOS™
Polarity N-CHANNEL
Fall Time 12ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 64mR
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 354pF
Power Dissipation 47W
Turn-On Delay Time 4ns
On-State Resistance 64mR
Turn-Off Delay Time 21ns
Max Power Dissipation 47W
Max Dual Supply Voltage 55V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 47mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 19A
Drain to Source Voltage (Vdss) 55V
Drain to Source Breakdown Voltage 55V

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