IPD50R280CE
Производится
Увеличить
Краткое описание:
550V 18.1A N-CH Power MOSFET DPAK CoolMOS
Дополнительная информация
N-channel Power MOSFET, CoolMOS technology, 550V drain-source voltage, 18.1A continuous drain current, 280mΩ drain-source resistance at 13V. Surface mount DPAK (TO-252AA) package with 3 pins and gull-wing leads, suitable for automotive applications. Features a maximum power dissipation of 119W and operates from -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Process Technology | CoolMOS |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.41(Max) |
| Package Length (mm) | 6.73(Max) |
| Seated Plane Height (mm) | 2.56(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 119000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 32.6nC |
| Typical Gate Charge @ Vgs | 32.6@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 550V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 280@13VmOhm |
| Typical Input Capacitance @ Vds | 773@100VpF |
| Maximum Continuous Drain Current | 18.1A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
