IPD50R500CE
Производится
Увеличить
Краткое описание:
500V N-CH Power MOSFET, 7.6A, DPAK, TO-252
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source voltage and 7.6A continuous drain current. This single-element transistor utilizes CoolMOS CE process technology and is housed in a surface-mount DPAK (TO-252AA) package with gull-wing leads. Key specifications include a maximum gate-source voltage of 20V, a typical gate threshold voltage of 3.5V, and a low on-resistance of 500mΩ at 13V. The DPAK package measures 6.73mm (max) length, 6.22mm (max) width, and 2.41mm (max) height, with a pin pitch of 2.29mm.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-252AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | DPAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.29 |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 6.22(Max) |
| Process Technology | CoolMOS CE |
| Package Description | Deca Watt Package |
| Package Family Name | TO-252 |
| Package Height (mm) | 2.41(Max) |
| Package Length (mm) | 6.73(Max) |
| Seated Plane Height (mm) | 2.56(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 57000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 18.7nC |
| Typical Gate Charge @ Vgs | 18.7@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 500V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 500@13VmOhm |
| Typical Input Capacitance @ Vds | 433@100VpF |
| Maximum Continuous Drain Current | 7.6A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
