IPD65R225C7ATMA1

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IPD65R225C7ATMA1 - Infineon
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Краткое описание: 650V 11A TO-252-3 Surface Mount MOSFET
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IPD65R225C7ATMA1 is a 650V surface mount MOSFET from Infineon with a maximum continuous drain current of 11A. It features a TO-252-3 package and is suitable for high-power applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 63W and a maximum Rds on resistance of 225mΩ.
RoHS Compliant
Mount Surface Mount
Series CoolMOS™ C7
Fall Time 10ns
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 225mR
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Input Capacitance 996pF
Power Dissipation 63W
Number of Elements 1
Turn-On Delay Time 9ns
Turn-Off Delay Time 48ns
Max Power Dissipation 63W
Max Dual Supply Voltage 650V
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Drain to Source Voltage (Vdss) 650V

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