IPD80R1K0CEATMA1
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Краткое описание:
800V N-Ch MOSFET, 18A, 950mR RdsOn, TO-252, Surface Mount
Дополнительная информация
N-channel power MOSFET featuring 800V drain-source voltage and 5.7A continuous drain current. This surface-mount transistor offers a low on-state resistance of 950mΩ and a maximum power dissipation of 83W. Designed for efficient switching, it exhibits fast switching characteristics with a fall time of 8ns. Packaged in a TO-252-3 case, this RoHS compliant component operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | CoolMOS™ CE |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 950mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 785pF |
| Power Dissipation | 83W |
| Threshold Voltage | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| On-State Resistance | 950mR |
| Turn-Off Delay Time | 72ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 83W |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 800mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Voltage (Vdss) | 800V |
