IPD90N03S4L-02
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Краткое описание:
Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
| RoHS | Compliant |
| Width | 6.22mm |
| Height | 2.3mm |
| Length | 6.5mm |
| Series | OptiMOS™ |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 2.2mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 9.75nF |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 62ns |
| Max Power Dissipation | 136W |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 30V |
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