IPD90N06S4L05ATMA2

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IPD90N06S4L05ATMA2 - Infineon
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Краткое описание: 60V 90A N-Channel MOSFET, 4.6mR Rds On, TO-252
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-Channel Power MOSFET, 60V Drain-Source Voltage, 90A Continuous Drain Current, and 4.6mΩ On-State Resistance. This surface-mount device features a TO-252 package, 107W maximum power dissipation, and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and 13ns fall time. Designed for automotive applications and AEC-Q101 qualified, this RoHS-compliant component is supplied in tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Series Automotive, AEC-Q101, OptiMOS™
Weight 0.139332oz
Polarity N-CHANNEL
Fall Time 13ns
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 4.6mR
Halogen Free Halogen Free
Package/Case TO-252-3
RoHS Compliant Yes
Package Quantity 2500
Input Capacitance 8.18nF
Power Dissipation 107W
Number of Channels 1
Turn-On Delay Time 14ns
On-State Resistance 4.6mR
Turn-Off Delay Time 80ns
Max Power Dissipation 107W
Max Dual Supply Voltage 60V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 90A
Drain to Source Voltage (Vdss) 60V

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