IPD90P04P4L04ATMA1
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P-Channel MOSFET, 90A, -40V, 4.3mR, TO-252, Surface Mount
Дополнительная информация
P-channel power MOSFET, 40V drain-source breakdown voltage, 90A continuous drain current, and 4.3mΩ on-state resistance. Features a TO-252 surface-mount package, 125W power dissipation, and a maximum operating temperature of 175°C. Includes a threshold voltage of -1.7V and a gate-source voltage rating of 16V. RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 2.35mm |
| Series | OptiMOS™ |
| Fall Time | 60ns |
| Lead Free | Contains Lead |
| Packaging | Cut Tape |
| Rds On Max | 4.3mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 11.57nF |
| Power Dissipation | 125W |
| Threshold Voltage | -1.7V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| On-State Resistance | 4.3mR |
| Turn-Off Delay Time | 140ns |
| Max Power Dissipation | 125W |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.1mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | -40V |
| Drain to Source Breakdown Voltage | -40V |
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