IPD90R1K2C3ATMA1
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Краткое описание:
N-Channel MOSFET, 900V, 5.1A, 1.2Ω, TO-252, Surface Mount
Дополнительная информация
N-channel MOSFET transistor featuring 900V drain-to-source voltage and 5.1A continuous drain current. This single-element transistor offers a low on-state resistance of 1.2 ohms at 10V gate-to-source voltage. With a maximum power dissipation of 83W and a surface mount TO-252-3 package, it is suitable for demanding applications. Operating temperature range spans from -55°C to 150°C, with typical switching times including a 70ns turn-on delay and 40ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | CoolMOS™ |
| Weight | 0.139332oz |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Halogen Free | Not Halogen Free |
| Package/Case | TO-252-3 |
| RoHS Compliant | Yes |
| Package Quantity | 2500 |
| Input Capacitance | 710pF |
| Power Dissipation | 83W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 70ns |
| On-State Resistance | 1.2R |
| Radiation Hardening | No |
| Turn-Off Delay Time | 400ns |
| Element Configuration | Single |
| Max Power Dissipation | 83W |
| Max Dual Supply Voltage | 900V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.2R |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 5.1A |
| Drain to Source Voltage (Vdss) | 900V |
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