IPG16N10S461ATMA1

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IPG16N10S461ATMA1 - Infineon
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Краткое описание: 2 N-Channel MOSFET, 16A, 100V, 29W, Surface Mount, -55°C to 175°C
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IPG16N10S461ATMA1 is a 2 N-Channel MOSFET with a maximum continuous drain current of 16A and a maximum drain to source voltage of 100V. It has a maximum power dissipation of 29W and operates over a temperature range of -55°C to 175°C. The device is packaged in a small outline, R-PDSO-F6 package and is designed for surface mount applications. It is compliant with RoHS regulations and is suitable for automotive applications, meeting the AEC-Q101 standard.
RoHS Compliant
Mount Surface Mount
Series Automotive, AEC-Q101, OptiMOS™
FET Type 2 N-Channel
Lead Free Contains Lead
Packaging Tape and Reel
Rds On Max 61mR
Halogen Free Halogen Free
RoHS Compliant Yes
Package Quantity 5000
Input Capacitance 490pF
Power Dissipation 29W
Turn-On Delay Time 3ns
On-State Resistance 61mR
Turn-Off Delay Time 5ns
Max Power Dissipation 29W
Max Dual Supply Voltage 100V
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 53mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 100V

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