IPG20N06S2L65AATMA1
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Краткое описание:
55V 20A N-CH MOSFET, 65mR Rds(on), TDSON, 2-Ch
Дополнительная информация
N-channel MOSFET, 55V drain-source breakdown voltage, 20A continuous drain current, and 65mΩ maximum on-state resistance. Features 2 N-channel FETs with a 53mΩ drain-to-source resistance and a maximum power dissipation of 43W. Designed for surface mounting in an 8-pin TDSON package, this component operates from -55°C to 175°C and is RoHS compliant. Includes fast switching characteristics with turn-on delay time of 2ns and fall time of 7ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.1mm |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel |
| Fall Time | 7ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 65mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Input Capacitance | 410pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 2ns |
| On-State Resistance | 79mR |
| Turn-Off Delay Time | 10ns |
| Max Power Dissipation | 43W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 53mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
