IPG20N06S4L11ATMA1
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Краткое описание:
N-Channel MOSFET 60V 20A 11.2mR TDSON-8
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers low 11.2mΩ on-state resistance for efficient power switching. Designed with a 16V gate-source voltage and a maximum power dissipation of 65W. Operates across a wide temperature range from -55°C to 175°C. Packaged in TDSON-8 for surface-mount applications, supplied on tape and reel.
| RoHS | Compliant |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 11.2mR |
| Halogen Free | Halogen Free |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Input Capacitance | 4.02nF |
| Power Dissipation | 65W |
| Turn-On Delay Time | 11ns |
| On-State Resistance | 11.2mR |
| Turn-Off Delay Time | 58ns |
| Max Power Dissipation | 65W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 11.2mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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