IPG20N10S4L22ATMA1
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Краткое описание:
100V 20A N-Ch MOSFET, 22mR Rds On, Surface Mount
Дополнительная информация
Automotive-grade N-channel Power MOSFET featuring 100V drain-source breakdown voltage and 20A continuous drain current. This surface-mount device offers a low 22mΩ on-state resistance and 60W maximum power dissipation, with fast switching characteristics including a 5ns turn-on delay and 18ns fall time. Operating across a wide temperature range of -55°C to 175°C, it is RoHS compliant and halogen-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1mm |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| FET Type | 2 N-Channel |
| Fall Time | 18ns |
| Lead Free | Contains Lead |
| Rds On Max | 22mR |
| Halogen Free | Halogen Free |
| Package/Case | 100 |
| RoHS Compliant | Yes |
| Package Quantity | 5000 |
| Input Capacitance | 1.755nF |
| Power Dissipation | 60W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Turn-On Delay Time | 5ns |
| On-State Resistance | 22mR |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 60W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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