IPI024N06N3GXKSA1
Производится
Краткое описание:
N-Channel MOSFET, 60V, 120A, 2.4mR, TO-262
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 120A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.4mΩ drain-source resistance. Designed for surface mount and through-hole applications, it operates within a temperature range of -55°C to 175°C and boasts a maximum power dissipation of 250W. Key switching characteristics include a 24ns fall time, 41ns turn-on delay, and 79ns turn-off delay. The component is halogen-free, lead-free, and RoHS compliant, packaged in a TO-262-3 configuration.
| RoHS | Compliant |
| Mount | Surface Mount, Through Hole |
| Width | 4.4mm |
| Height | 9.25mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 24ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 2.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 23nF |
| Turn-On Delay Time | 41ns |
| Turn-Off Delay Time | 79ns |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 2.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 60V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
