IPI040N06N3GXKSA1
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Краткое описание:
60V 90A N-Channel MOSFET, 3.7mR Rds On, TO-262
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 90A continuous drain current. Offers a low 3.7mΩ drain-source resistance (Rds On Max 4mΩ) for efficient power handling. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 188W. Packaged in a TO-262-3 through-hole mount, this silicon metal-oxide semiconductor FET is halogen and lead-free, RoHS compliant, and designed for high-performance applications.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.52mm |
| Height | 9.45mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 11nF |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 40ns |
| Max Power Dissipation | 188W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
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