IPI041N12N3 G
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Краткое описание:
120V 120A N-CH Power MOSFET TO-262
Дополнительная информация
N-channel Power MOSFET featuring 120V drain-source voltage and 120A continuous drain current. This single-element OptiMOS transistor utilizes an N-channel enhancement mode with a low 4.1 mOhm drain-source resistance at 10V. Packaged in a TO-262 (I2PAK) through-hole configuration with 3 pins and a tab, it offers a maximum power dissipation of 300W and operates from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-262AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-262 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.57(Max) |
| Process Technology | OptiMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | I2PAK |
| Package Height (mm) | 9.45(Max) |
| Package Length (mm) | 10.36(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 158nC |
| Typical Gate Charge @ Vgs | 158@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 120V |
| Maximum Drain Source Resistance | 4.1@10VmOhm |
| Typical Input Capacitance @ Vds | 10400@60VpF |
| Maximum Continuous Drain Current | 120A |
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