IPI110N20N3 G
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Краткое описание:
N-CH Power MOSFET 200V 88A TO-262
Дополнительная информация
N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. Features a maximum drain-source voltage of 200V and a continuous drain current of 88A. This single-element transistor utilizes OptiMOS process technology and offers a low drain-source on-resistance of 11mΩ at 10V. Packaged in a TO-262 (I2PAK) through-hole configuration with 3 pins and a tab, it supports a maximum power dissipation of 300W and operates across a wide temperature range of -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | TO-262AA |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-262 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.57(Max) |
| Process Technology | OptiMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | I2PAK |
| Package Height (mm) | 9.45(Max) |
| Package Length (mm) | 10.36(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 15.98(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 300000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 65nC |
| Typical Gate Charge @ Vgs | 65@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Input Capacitance @ Vds | 5340@100VpF |
| Maximum Continuous Drain Current | 88A |
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