IPI120N04S402AKSA1
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Краткое описание:
Power Field-Effect Transistor, 120A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 120A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
| RoHS | Compliant |
| Width | 4.4mm |
| Height | 9.25mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 2.1mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 10.74nF |
| Power Dissipation | 158W |
| Turn-On Delay Time | 27ns |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 158W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 40V |
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