IPI60R190C6XKSA1
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Краткое описание:
600V 20.2A N-Channel MOSFET, 190mR, TO-262
Дополнительная информация
N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 20.2A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 190mΩ on-state resistance and 151W maximum power dissipation. Designed for efficient switching, it exhibits a typical fall time of 9ns and turn-on delay of 15ns. Packaged in a TO-262-3 configuration, this component is RoHS compliant and operates within a temperature range of -55°C to 150°C.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 190mR |
| Nominal Vgs | 3V |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 151W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 15ns |
| On-State Resistance | 190mR |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 151W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 190mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 20.2A |
| Drain to Source Breakdown Voltage | 650V |
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