IPI60R280C6XKSA1
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Краткое описание:
600V 13.8A N-Channel MOSFET, 280mR Rds(on), TO-262
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source voltage and 13.8A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 280mΩ at a nominal gate-source voltage of 3V. Designed for high-efficiency power applications, it boasts a maximum power dissipation of 104W and operates within a temperature range of -55°C to 150°C. The component is packaged in a TO-262-3 configuration, is RoHS compliant, and halogen-free.
| RoHS | Compliant |
| Series | CoolMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 280mR |
| Nominal Vgs | 3V |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 950pF |
| Power Dissipation | 104W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 13ns |
| On-State Resistance | 280mR |
| Turn-Off Delay Time | 100ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 104W |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 280mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 13.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 650V |
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