IPI80N04S403AKSA1
Производится
Увеличить
Краткое описание:
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
| RoHS | Compliant |
| Width | 4.4mm |
| Height | 9.25mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Fall Time | 16ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 3.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 5.26nF |
| Power Dissipation | 94W |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 14ns |
| Max Power Dissipation | 94W |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
