IPI80N06S207AKSA1
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Краткое описание:
N-CH MOSFET 55V 80A 6.6mR TO-262 Power Transistor
Дополнительная информация
N-channel power MOSFET in a TO-262-3 package, featuring a 55V drain-source breakdown voltage and 80A continuous drain current. This device offers a low on-state resistance of 6.6mR at a 10V gate-source voltage, with a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 175°C, it exhibits fast switching characteristics with a turn-on delay of 16ns and a fall time of 36ns. Input capacitance is 3.4nF, and the component is halogen-free.
| RoHS | Not Compliant |
| Width | 4.4mm |
| Height | 9.25mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 36ns |
| Packaging | Rail/Tube |
| Rds On Max | 6.6mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| Package Quantity | 500 |
| Input Capacitance | 3.4nF |
| Power Dissipation | 250W |
| Turn-On Delay Time | 16ns |
| On-State Resistance | 6.6mR |
| Turn-Off Delay Time | 61ns |
| Max Power Dissipation | 250W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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