IPI80N06S405AKSA2
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Краткое описание:
60V 80A N-Channel MOSFET, 5.7mR Rds On, TO-262
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 5.7mΩ and a maximum power dissipation of 107W. Designed for through-hole mounting in a TO-262-3 package, it operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with a 8ns fall time. This RoHS compliant component is supplied in rail/tube packaging.
| RoHS | Compliant |
| Mount | Through Hole |
| Weight | 0.084199oz |
| Polarity | N-CHANNEL |
| Fall Time | 8ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 5.7mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 6.5nF |
| Power Dissipation | 107W |
| Number of Channels | 1 |
| Turn-On Delay Time | 20ns |
| On-State Resistance | 5.4mR |
| Turn-Off Delay Time | 35ns |
| Max Power Dissipation | 107W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
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