IPL65R230C7AUMA1
Производится
Краткое описание:
650V 10A N-Channel MOSFET, 230mR Rds On, VSON
Дополнительная информация
N-channel silicon power MOSFET featuring 650V drain-source voltage and 10A continuous drain current. This surface-mount device offers a low on-state resistance of 230mΩ and a maximum power dissipation of 67W. Operating across a wide temperature range of -40°C to 150°C, it boasts fast switching characteristics with a turn-on delay of 8ns and a fall time of 22ns. The VSON package ensures efficient thermal management for demanding applications.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | CoolMOS™ C7 |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Contains Lead |
| Packaging | Tape and Reel |
| Rds On Max | 230mR |
| Halogen Free | Halogen Free |
| Package/Case | VSON |
| RoHS Compliant | Yes |
| Package Quantity | 3000 |
| Input Capacitance | 996pF |
| Power Dissipation | 67W |
| Number of Elements | 1 |
| Turn-On Delay Time | 8ns |
| On-State Resistance | 230mR |
| Turn-Off Delay Time | 71ns |
| Max Power Dissipation | 67W |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Drain to Source Resistance | 230mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 650V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
