IPP037N06L3GXKSA1
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N-Channel MOSFET, 60V, 90A, 3.7mR, TO-220
Дополнительная информация
N-channel silicon power MOSFET featuring 60V drain-source breakdown voltage and 90A continuous drain current. This through-hole mounted component offers a low 3.7mΩ on-state resistance and a maximum power dissipation of 167W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is housed in a TO-220AB package. Key electrical characteristics include a 13nF input capacitance and fast switching times with a 25ns turn-on delay.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 15.95mm |
| Height | 4.57mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 13ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 3.7mR |
| Nominal Vgs | 1.7V |
| Halogen Free | Halogen Free |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 13nF |
| Power Dissipation | 167W |
| Threshold Voltage | 1.7V |
| Turn-On Delay Time | 25ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 3.7mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 64ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 167W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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