IPP040N06N3GXKSA1
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N-Channel MOSFET, 60V, 90A, 4mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 90A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 4mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 188W. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is housed in a TO-220AB package. Key switching characteristics include a 5ns fall time, 30ns turn-on delay, and 40ns turn-off delay. This component is RoHS compliant and lead-free.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 11nF |
| Power Dissipation | 188W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 30ns |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 188W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain to Source Breakdown Voltage | 60V |
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