IPP041N04NGXKSA1
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Краткое описание:
N-Channel MOSFET, 40V, 80A, 4.1mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 40V Vds, 80A continuous drain current, and 4.1mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package, 94W power dissipation, and a maximum operating temperature of 175°C. Key electrical characteristics include a 2V threshold voltage, 4.5nF input capacitance, and fast switching times with a 4.8ns fall time. The component is RoHS compliant and designed for high-efficiency power applications.
| RoHS | Compliant |
| Width | 4.572mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 4.8ns |
| Packaging | Rail/Tube |
| Rds On Max | 4.1mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 4.5nF |
| Power Dissipation | 94W |
| Threshold Voltage | 2V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 94W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 4.1mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain to Source Breakdown Voltage | 40V |
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