IPP057N08N3GXKSA1
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Краткое описание:
80V 80A N-Channel MOSFET, 5.7mR Rds On, TO-220
Дополнительная информация
N-channel power MOSFET featuring 80V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 5.7mΩ drain-source resistance (Rds On Max) and 150W maximum power dissipation. Designed for high-efficiency switching applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-220AB configuration. Key switching characteristics include a 10ns fall time, 18ns turn-on delay, and 38ns turn-off delay.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 5.7mR |
| Nominal Vgs | 2.8V |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 4.75nF |
| Power Dissipation | 150W |
| Threshold Voltage | 2.8V |
| Number of Elements | 1 |
| Turn-On Delay Time | 18ns |
| Turn-Off Delay Time | 38ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 5.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 80V |
| Drain to Source Breakdown Voltage | 80V |
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