IPP060N06N

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IPP060N06N - Infineon
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Краткое описание: N-CH MOSFET 60V 45A TO-220 Power Transistor
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel enhancement mode power MOSFET with a 60V drain-source voltage and 45A continuous drain current. Features low 6mΩ drain-source resistance at 10V Vgs and 27nC gate charge. Packaged in a 3-pin TO-220AB plastic through-hole package with a tab, suitable for automotive applications. Operates across a wide temperature range from -55°C to 175°C.
PCB 3
Tab Tab
ECCN EAR99
Jedec TO-220AB
EU RoHS Yes with Exemption
Category Power MOSFET
HTS Code 8541290095
Mounting Through Hole
Cage Code CG091
Pin Count 3
Automotive Yes
Lead Shape Through Hole
Schedule B 8541290080
Channel Mode Enhancement
Channel Type N
Package/Case TO-220
Configuration Single
RoHS Versions 2011/65/EU, 2015/863
Pin Pitch (mm) 2.54
Package Material Plastic
Basic Package Type Through Hole
Package Width (mm) 4.4
Process Technology OptiMOS
Package Description Transistor Outline Package
Package Family Name TO-220
Package Height (mm) 9.25
Package Length (mm) 10
Seated Plane Height (mm) 20.2
Max Operating Temperature 175°C
Maximum Power Dissipation 3000mW
Min Operating Temperature -55°C
Typical Gate Charge @ 10V 27nC
Typical Gate Charge @ Vgs 27@10VnC
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 1
Maximum Drain Source Voltage 60V
Maximum Gate Threshold Voltage 3.3V
Maximum Drain Source Resistance 6@10VmOhm
Typical Input Capacitance @ Vds 2000@30VpF
Maximum Continuous Drain Current 45A

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