IPP100N08S2-07
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Краткое описание:
Power Field-Effect Transistor, 100A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 100A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
| RoHS | Compliant |
| Width | 4.4mm |
| Height | 15.65mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Fall Time | 30ns |
| Packaging | Rail/Tube |
| Rds On Max | 7.1mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 4.7nF |
| Turn-On Delay Time | 26ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 61ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 75V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 75V |
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