IPP111N15N3GXKSA1
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Краткое описание:
Power Field-Effect Transistor, 83A I(D), 150V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 83A I(D), 150V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
| RoHS | Compliant |
| Mount | Through Hole |
| Height | 20.7mm |
| Fall Time | 9ns |
| Lead Free | Lead Free |
| Halogen Free | Halogen Free |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 3.23nF |
| Power Dissipation | 214W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 17ns |
| On-State Resistance | 11.1mR |
| Turn-Off Delay Time | 32ns |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 9.4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 83A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain to Source Breakdown Voltage | 150V |
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