IPP114N12N3 G
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Краткое описание:
N-CH Power MOSFET 100V 75A TO-220
Дополнительная информация
N-channel Power MOSFET, featuring 100V drain-source voltage and 75A continuous drain current. This single-element transistor utilizes OptiMOS process technology and offers a low drain-source on-resistance of 11.4 mOhm at 10V. Packaged in a 3-pin TO-220AB through-hole configuration with a tab, it operates from -55°C to 175°C.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-220AB |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.57(Max) |
| Process Technology | OptiMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.45(Max) |
| Package Length (mm) | 10.36(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 20.75(Max) |
| Max Operating Temperature | 175°C |
| Maximum Power Dissipation | 136000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 49nC |
| Typical Gate Charge @ Vgs | 49@10VnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Drain Source Resistance | 11.4@10VmOhm |
| Typical Input Capacitance @ Vds | 3240@60VpF |
| Maximum Continuous Drain Current | 75A |
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