IPP12CN10LGXKSA1
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N-Channel MOSFET, 100V, 69A, 12mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 100V Vds, 69A Continuous Drain Current, and 12mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package for through-hole mounting. It offers a maximum power dissipation of 125W and operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay and a 5ns fall time. This component is RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 12mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 5.6nF |
| Power Dissipation | 125W |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| Turn-Off Delay Time | 39ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 12mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 69A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain to Source Breakdown Voltage | 100V |
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