IPP16CN10NGXKSA1
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Краткое описание:
100V 53A N-Channel MOSFET, 16.5mR, TO-220
Дополнительная информация
N-Channel Power MOSFET, 100V Vdss, 53A continuous drain current, and 16.5mR Rds On. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting. It offers a maximum power dissipation of 100W and operates across a wide temperature range from -55°C to 175°C. The component is halogen-free, lead-free, RoHS compliant, and REACH SVHC compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 16.5mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220 |
| Current Rating | 53A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 500 |
| Input Capacitance | 3.22nF |
| Power Dissipation | 100W |
| Turn-On Delay Time | 15ns |
| Turn-Off Delay Time | 27ns |
| Reach SVHC Compliant | Yes |
| Max Power Dissipation | 100W |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 16mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Voltage (Vdss) | 100V |
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