IPP200N15N3GXKSA1
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N-Channel MOSFET, 150V, 50A, 20mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring 150V drain-source breakdown voltage and 50A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 20mΩ on-state resistance and 150W power dissipation. Designed with a TO-220AB package, it operates from -55°C to 175°C and includes fast switching characteristics with a 6ns fall time. The component is RoHS and Halogen Free compliant.
| RoHS | Compliant |
| Width | 4.57mm |
| Height | 15.95mm |
| Length | 10.36mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 6ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 20mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 1.82nF |
| Power Dissipation | 150W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14ns |
| On-State Resistance | 20mR |
| Turn-Off Delay Time | 23ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 20mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain to Source Breakdown Voltage | 150V |
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