IPP50R280CE
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Краткое описание:
N-CH Power MOSFET 550V 13A TO-220 TH
Дополнительная информация
N-channel Power MOSFET featuring CoolMOS technology, designed for through-hole mounting in a TO-220 package. This single-element transistor offers a maximum drain-source voltage of 550V and a continuous drain current of 13A. Key specifications include a maximum drain-source on-resistance of 280 mOhm at 13V, a typical gate charge of 32.6 nC at 10V, and a maximum power dissipation of 92W. The TO-220 package has a 3-pin configuration with a tab, measuring 10.36mm(Max) in length, 4.57mm(Max) in width, and 9.45mm(Max) in height.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | No |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.57(Max) |
| Process Technology | CoolMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.45(Max) |
| Package Length (mm) | 10.36(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 92000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 32.6nC |
| Typical Gate Charge @ Vgs | 32.6@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 550V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Drain Source Resistance | 280@13VmOhm |
| Typical Input Capacitance @ Vds | 773@100VpF |
| Maximum Continuous Drain Current | 13A |
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