IPP65R310CFDA
Производится
Увеличить
Краткое описание:
650V 11.4A N-CH MOSFET TO-220 Power Transistor
Дополнительная информация
Automotive N-channel Power MOSFET featuring 650V drain-source voltage and 11.4A continuous drain current. This single-element CoolMOS transistor offers a low 310mΩ drain-source resistance at 10V and a 4.5V gate threshold voltage. Packaged in a 3-pin TO-220 through-hole configuration with a tab, it operates from -40°C to 150°C. Key specifications include 41nC typical gate charge and 1110pF typical input capacitance.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-220AB |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-220 |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 4.57(Max) |
| Process Technology | CoolMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-220 |
| Package Height (mm) | 9.45(Max) |
| Package Length (mm) | 10.36(Max) |
| Seated Plane Height (mm) | 20.75(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 104200mW |
| Min Operating Temperature | -40°C |
| Typical Gate Charge @ 10V | 41nC |
| Typical Gate Charge @ Vgs | 41@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 310@10VmOhm |
| Typical Input Capacitance @ Vds | 1110@100VpF |
| Maximum Continuous Drain Current | 11.4A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
