IPP80N06S209AKSA2
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Краткое описание:
N-Channel MOSFET, 80A, 55V, 9.1mR, TO-220
Дополнительная информация
N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. Offers low on-state resistance of 9.1mΩ (typ.) and 7.6mΩ (max.) for efficient power switching. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 190W. Packaged in a TO-220-3 configuration, this silicon metal-oxide semiconductor FET is RoHS compliant.
| RoHS | Compliant |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 28ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 9.1mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 2.36nF |
| Power Dissipation | 190W |
| Turn-On Delay Time | 14ns |
| On-State Resistance | 9.1mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 39ns |
| Max Power Dissipation | 190W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.6mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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