IPP80N06S2H5AKSA1
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Краткое описание:
N-Channel MOSFET, 80A, 55V, 5.5mR, TO-220
Дополнительная информация
N-channel silicon power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This device offers a low 5.5mΩ Rds On resistance, enabling efficient power handling with a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 175°C, it utilizes a TO-220-3 package and exhibits fast switching characteristics with a 22ns fall time and 48ns turn-off delay.
| RoHS | Not CompliantNo |
| Width | 4.4mm |
| Height | 15.65mm |
| Length | 10mm |
| Series | OptiMOS™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Packaging | Rail/Tube |
| Rds On Max | 5.5mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | No |
| Package Quantity | 500 |
| Input Capacitance | 4.4nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 48ns |
| Max Power Dissipation | 300W |
| Max Dual Supply Voltage | 55V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
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