IPP80N06S407AKSA2
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Краткое описание:
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Дополнительная информация
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
| RoHS | Compliant |
| Mount | Through Hole |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Fall Time | 5ns |
| Lead Free | Contains Lead |
| Packaging | Rail/Tube |
| Rds On Max | 7.4mR |
| Halogen Free | Halogen Free |
| Package/Case | TO-220-3 |
| RoHS Compliant | Yes |
| Package Quantity | 500 |
| Input Capacitance | 4.5nF |
| Power Dissipation | 79W |
| Turn-On Delay Time | 15ns |
| On-State Resistance | 7.1mR |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 79W |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 60V |
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