IPW65R019C7
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Краткое описание:
Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Дополнительная информация
Power Field-Effect Transistor, 75A I(D), 650V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
| RoHS | Compliant |
| Fall Time | 5ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 19mR |
| Package/Case | TO-247-3 |
| RoHS Compliant | Yes |
| Package Quantity | 240 |
| Power Dissipation | 446W |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 106ns |
| Reach SVHC Compliant | Yes |
| Element Configuration | Single |
| Max Power Dissipation | 446W |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 19mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
