IPW65R048CFDAFKSA1

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IPW65R048CFDAFKSA1 - Infineon
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Краткое описание: 650V 63.3A TO-247-3 Power MOSFET
Производитель Infineon
Статус производства Производится (ACTIVE)

Дополнительная информация

The IPW65R048CFDAFKSA1 is a 650V power MOSFET with a continuous drain current of 63.3A. It features a drain to source resistance of 43mR and a maximum operating temperature of 150°C. The device is packaged in a TO-247-3 flange mount package and is lead free. It is compliant with AEC-Q101 and RoHS standards. The MOSFET has a maximum power dissipation of 500W and an on-state resistance of 48mR.
RoHS Compliant
Series Automotive, AEC-Q101, CoolMOS™
Fall Time 4ns
Lead Free Lead Free
Packaging Rail/Tube
Rds On Max 48mR
Package/Case TO-247-3
RoHS Compliant Yes
Input Capacitance 7.44nF
Power Dissipation 500W
Number of Elements 1
Turn-On Delay Time 22ns
On-State Resistance 48mR
Radiation Hardening No
Turn-Off Delay Time 85ns
Max Power Dissipation 500W
Max Dual Supply Voltage 650V
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Drain to Source Resistance 43mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 63.3A
Drain to Source Voltage (Vdss) 650V

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