IPW65R080CFDA
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Краткое описание:
650V 43.3A N-CH MOSFET TO-247 Power Transistor
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source voltage and 43.3A continuous drain current. This single-element device utilizes CoolMOS process technology and offers a low 80mΩ drain-source resistance at 10V. Packaged in a 3-pin TO-247 plastic through-hole configuration, it supports a maximum power dissipation of 391W and operates within a -40°C to 150°C temperature range.
| PCB | 3 |
| Tab | Tab |
| ECCN | EAR99 |
| Jedec | TO-247 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Through Hole |
| Cage Code | CG091 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Through Hole |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | TO-247 |
| AEC Qualified | Yes |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 5.44 |
| Package Material | Plastic |
| Basic Package Type | Through Hole |
| Package Width (mm) | 5.21(Max) |
| Process Technology | CoolMOS |
| Package Description | Transistor Outline Package |
| Package Family Name | TO-247 |
| Package Height (mm) | 21.1(Max) |
| Package Length (mm) | 16.13(Max) |
| Seated Plane Height (mm) | 25.57(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 391000mW |
| Min Operating Temperature | -40°C |
| Typical Gate Charge @ 10V | 161nC |
| Typical Gate Charge @ Vgs | 161@10VnC |
| Maximum Gate Source Voltage | 20V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 650V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 80@10VmOhm |
| Typical Input Capacitance @ Vds | 4440@100VpF |
| Maximum Continuous Drain Current | 43.3A |
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