IRF1310NSPBF
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Краткое описание:
N-Channel MOSFET, 100V, 42A, 36mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, offering 100V drain-source breakdown voltage and 42A continuous drain current. Features low 36mΩ drain-source on-resistance and 1.9nF input capacitance. Operates from -55°C to 175°C with 3.8W power dissipation. Includes fast switching times with 11ns turn-on and 40ns fall times. Surface mountable with lead-free and RoHS compliant construction.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® Series |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 42A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 50 |
| Input Capacitance | 1.9nF |
| Power Dissipation | 3.8W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 11ns |
| Dual Supply Voltage | 100V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 3.8W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 36mR |
| Drain to Source Breakdown Voltage | 100V |
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