IRF1324S-7PPBF
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Краткое описание:
N-CH MOSFET 24V 429A 1mR D2PAK 300W
Дополнительная информация
N-channel power MOSFET featuring a 24V drain-source breakdown voltage and a low 0.8 milliohm drain-source on-resistance. This surface-mount device in a D2PAK package offers a continuous drain current of 429A and a maximum power dissipation of 300W. It operates with a gate-source voltage up to +/-20V and a nominal gate-source voltage of 4V. The component exhibits fast switching characteristics with turn-on delay time of 19ns and fall time of 93ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.55mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 93ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 1mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 429A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 24V |
| Package Quantity | 50 |
| Input Capacitance | 7.7nF |
| Power Dissipation | 300W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 19ns |
| Dual Supply Voltage | 24V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 86ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 429A |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 1MR |
| Drain to Source Breakdown Voltage | 24V |
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