IRF1503SPBF
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Краткое описание:
N-Channel MOSFET, 30V, 190A, 3.3mΩ, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Drain-Source Voltage, 190A Continuous Drain Current, and 75A Current Rating. Features low 3.3mΩ maximum drain-source on-resistance and 200W power dissipation. Operates from -55°C to 175°C with fast switching times including 17ns turn-on delay and 48ns fall time. Packaged in a surface-mount D2PAK with lead-free and RoHS compliance.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® Series |
| Polarity | N-CHANNEL |
| Fall Time | 48ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| Current Rating | 75A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 50 |
| Input Capacitance | 5.73nF |
| Power Dissipation | 200W |
| Turn-On Delay Time | 17ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 59ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 200W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 190A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.3MR |
| Drain to Source Breakdown Voltage | 30V |
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