IRF3709ZSPBF
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N-Channel MOSFET, 30V, 87A, 6.3mR, D2PAK, Surface Mount
Дополнительная информация
N-Channel Power MOSFET, 30V Drain-Source Voltage, 87A Continuous Drain Current, and 6.3mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a D2PAK surface-mount package, 79W max power dissipation, and operates from -55°C to 175°C. Key electrical characteristics include a 2.13nF input capacitance, 4.7ns fall time, 13ns turn-on delay, and 16ns turn-off delay. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65mm |
| Height | 4.83mm |
| Length | 10.67mm |
| Series | HEXFET® |
| Polarity | N-CHANNEL |
| Fall Time | 4.7ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 6.3mR |
| Nominal Vgs | 2.25V |
| Package/Case | D2PAK |
| Current Rating | 87A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 50 |
| Input Capacitance | 2.13nF |
| Power Dissipation | 79W |
| Threshold Voltage | 2.25V |
| Number of Elements | 1 |
| Turn-On Delay Time | 13ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 79W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 7.8mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 87A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.3MR |
| Drain to Source Breakdown Voltage | 30V |
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